Title of article
Effects of low dimensions on junction parameters of MOS devices
Author/Authors
M. Faurichon de la Bardonnie، نويسنده , , M and Toufik، نويسنده , , N and El-Tahchi، نويسنده , , Pierre and Pelanchon، نويسنده , , F and Mialhe، نويسنده , , P، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
3
From page
286
To page
288
Abstract
The electrical properties of the drain–substrate diode of submicronic devices are shown to be related to the device geometrical structure. The analysis takes into account two-dimensional edge effects. Intrinsic parameters are extracted from current–voltage characteristics and obtained dependant on the gate length and width. A degradation of the electrical properties is discussed and edge effects are related to small gate surface.
Keywords
MOSFET , Submicronic , junction , characterization
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2000
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2135480
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