Title of article
1.3 μm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, and influence of the re-growth temperature on the spectral response
Author/Authors
Saint-Girons، نويسنده , , G and Mereuta، نويسنده , , A and Gérard، نويسنده , , J.M and Ramdane، نويسنده , , A and Sagnes، نويسنده , , I، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
3
From page
145
To page
147
Abstract
1.32 μm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots (QDs) based P-N diodes is presented. High growth temperature of the upper cladding layer (670°C) induces a significant degradation and blueshift of the QDs emission, showing the importance to maintain a low thermal budget during the entire growth step.
Keywords
LP-MOVPE , electroluminescence , Quantum dots , Re-growth temperature
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2000
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2136311
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