Title of article
Defects in SiGe virtual substrates for high mobility electron gas
Author/Authors
Di Gaspare، نويسنده , , L. and Fiorini، نويسنده , , P. and Scappucci، نويسنده , , G. and Evangelisti، نويسنده , , F. and Palange، نويسنده , , E.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
36
To page
40
Abstract
We have investigated the morphology defects, in particular, pits present in compositionally graded SiGe thick films heteroepitaxially grown on Si(001) surfaces. Besides the pits clearly related to impurities and interface defects, a class of pits intrinsic to the strained-layer growth has been found. Two stable and one metastable pit shapes have been identified that can be related to the alloy film thickness and pit dimension. The influence of the pits on the mobility of the two dimensional electron gas grown on these kinds of substrates has been also investigated.
Keywords
SiGe alloy , Morphological defects , chemical vapor deposition
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2136463
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