• Title of article

    Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability

  • Author/Authors

    Cassette، نويسنده , , S. and Delage، نويسنده , , S.L. and Chartier، نويسنده , , E. and Floriot، نويسنده , , D. and Poisson، نويسنده , , M.A. and Garcia، نويسنده , , J.C. and Grattepain، نويسنده , , C. and Mimila Arroyo، نويسنده , , J. and Plana، نويسنده , , Mary R. and Bland، نويسنده , , S.W.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    5
  • From page
    279
  • To page
    283
  • Abstract
    We report the result of investigation on hydrogen effects on GaInP/GaAs HBT structures originating from different MOCVD and CBE suppliers. It is demonstrated that hydrogen gives rise to initial unstable electrical behaviour by cross-examination of samples with and without hydrogen either intrinsically or by thermal-assisted removal. Annealing conditions to remove hydrogen have been optimized on the basis of SIMS analyses and Gummel plot characteristics to control eventual degradation of the junctions. It has been found that under particular doping and growth conditions, C2H complexes can be formed. These defects appear more stable than CH complexes which may explain the difficulty to remove hydrogen from some epitaxial layers.
  • Keywords
    GaInP/GaAs HBT structures , Carbon doping , Hydrogen-related effects
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    2001
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2136634

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2136634