Title of article
Impact of MOCVD-GaN ‘templates’ on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN
Author/Authors
Valcheva، نويسنده , , E and Paskova، نويسنده , , T and Abrashev، نويسنده , , M.V and Persson، نويسنده , , P.إ.O and Paskov، نويسنده , , P.P and Goldys، نويسنده , , E.M and Beccard، نويسنده , , R and Heuken، نويسنده , , M and Monemar، نويسنده , , B، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
4
From page
35
To page
38
Abstract
Thick HVPE-GaN layers are grown on Si-doped and undoped MOCVD-GaN ‘template’ layers as well as directly on sapphire, with the aim to investigate the effect of the MOCVD template on the strain relaxation and spatial distribution of free carriers in the overgrown HVPE films. Spatially resolved cross-sectional micro-Raman measurements, cathodoluminescence and transmission electron microscopy show improved crystalline quality resulting in elimination of the non-uniformities of electron distribution, a low free carrier concentration (<1017 cm−3) as well as a significant strain relaxation effect.
Keywords
HVPE , strain , GaN , Doping distribution
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2136963
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