Atomic arrangement of dislocation defects in GaAs by HREM

Atom positions and local structure around a perfect dislocation and the central stacking fault of a Z-shape faulted dipole in deformed GaAs were evaluated numerically through high resolution electron microscopic (HREM) analysis. It was revealed around the central stacking fault, connecting the two stair-rods of the dipole, that there exists a local atomic displacement by the original faulting reaction with the motion of a Shockley dislocation. In addition, the stacking fault was found to be a unique atomic structure due to relaxation, different from that of the intrinsic stacking fault of a dissociated dislocation.