Title of article
Nonlinear spectroscopy of homoepitaxial GaN
Author/Authors
Schweitzer، نويسنده , , C and Frِhlich، نويسنده , , D and Reimann، نويسنده , , K and Prystawko، نويسنده , , P and Leszczynski، نويسنده , , M and Suski، نويسنده , , T، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
3
From page
156
To page
158
Abstract
Exciton polaritons from the three uppermost valence bands and the lowest conduction band in homoepitaxial GaN are studied by nonlinear spectroscopy. Second and third harmonic generation and three-photon difference-frequency generation are used to excite resonances on different polariton branches. The resonances show a characteristic polarization dependence, which is consistent with the symmetry assignment of the valence bands.
Keywords
Nonlinear optics , excitons , Electronic band-structure , Polaritons , Gallium nitride
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2137102
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