Optoelectronic characterization of blue InGaN/GaN LEDS grown by MBE

Light emitting diodes were grown by molecular beam epitaxy using NH3 as nitrogen precursor. The active layer is composed by a single plane of undoped InGaN layer with about 15% of In. The structure was buried by 2700 Å of Mg-doped GaN (p=1×1017 cm−3). The turn on voltage is at 4.5 V and the operating voltage is 6.1 V at 20 mA. Temperature dependent I(V) characteristics reveal the predominance of tunneling injection current. We measure room temperature electroluminescence in the blue from 440 to 490 nm with a narrow full width at half maximum.