• Title of article

    Real defect concentration measurements of nuclear detector materials by the combination of PICTS and SCLC methods

  • Author/Authors

    Ayoub، نويسنده , , M and Hage-Ali، نويسنده , , M and Koebel، نويسنده , , J.M and Régal، نويسنده , , R and Rit، نويسنده , , C and Klotz، نويسنده , , F and Zumbiehli، نويسنده , , A and Siffert، نويسنده , , P، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    7
  • From page
    173
  • To page
    179
  • Abstract
    The measurement of the real defect concentration by Photo-induced current transient spectroscopy method (PICTS) is still unattainable owing to the presence of reflecting metal layer contacts that avoid the knowledge of the real absorbed photons number and then the real photogenerated current in the sample. The combination of the two methods PICTS and space charge limited current (SCLC) allows to the extraction of the mean apparent absorption coefficient of the excitation light in the considered sample, as a consequence that leads to solve few main problems like: the scaling of PICTS spectra in term of real defect concentration and the μτ product evolution.
  • Keywords
    CdTe , Picts , SCLC , Concentration , Defects
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    2001
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2137305