Title of article
Characterization of p-AgGa0.25In0.75Se2/n-Zn0.35Cd0.65S polycrystalline thin film heterojunctions
Author/Authors
K. Hema Chandra Reddy ، نويسنده , , G. and Hussain، نويسنده , , O.M. and Uthanna، نويسنده , , S. and Srinivasulu Naidu، نويسنده , , B.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
4
From page
60
To page
63
Abstract
Polycrystalline thin film p-AgGa0.25In0.75Se2/n-Zn0.35Cd0.65S heterojunctions were fabricated and the current density–voltage, capacitance–voltage and spectral response characteristics of the junctions were studied. The heterojunction was illuminated in the back-wall configuration and an open-circuit voltage of 490 mV, a short-circuit current density of 27 mA cm−2 and an electrical conversion efficiency of 7.8% have been obtained for a cell with an active area of 1 cm2 under a solar input of 100 mW cm−2.
Keywords
Semiconductors , Optical properties , Electrical properties and measurements , solar cells , I-III-VI2 compounds
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2001
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2137659
Link To Document