Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD

High mobility strained silicon quantum wells in modulation doped SiGe heterostructures, grown epitaxially on silicon substrates, offer exciting opportunities for devices compatible with silicon CMOS processing, having significantly improved performance over their single crystal silicon counterparts. We present results from a collaborative academic/industrial program to develop field effect transistors suitable for cryogenic circuit applications. This work reports on the fabrication and characterization of heterostructure material grown using atmospheric pressure CVD, low temperature characterization of the electronic properties of the material, FET device fabrication and FET performance at 0.3–4.2 K.