Controlling size distribution in silicon brush-like superstructures grown by self-organisation

The analysis of distribution on radii of wire-like crystals grown by self-organisation process is presented. The time evolution of radii as well as their distribution functions are described using different models of crystal growth and the Fokker–Plank equation. A rather good agreement between the results of calculations and experimental distributions of silicon wires prepared by stimulated growth by vapour-transport reactions is achieved. The results suggest that the self-organisation processes can be used for the formation of structures with desired distribution of nanowires on radii.