Title of article
n-type Si/SiGe resonant tunnelling diodes
Author/Authors
Paul، نويسنده , , D.J and See، نويسنده , , P and Zozoulenko، نويسنده , , I.V and Berggren، نويسنده , , K.-F and Hollنnder، نويسنده , , B and Mantl، نويسنده , , S and Griffin، نويسنده , , N and Coonan، نويسنده , , B.P and Redmond، نويسنده , , G and Crean، نويسنده , , G.M، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
4
From page
26
To page
29
Abstract
Resonant tunnelling diodes (RTDs) have been fabricated using Si/SiGe heterolayers which demonstrate room temperature performance comparable to III–V technology. Peak current densities up to 282 kA cm−2 with peak-to-valley current ratios (PVCRs) of 2.4 have been demonstrated at room temperature in devices with dimensions of 5×5 μm2. Scaling the device size demonstrates that the peak current density is inversely proportional to the device area. It is suggested that this is related to thermal limitations in the device structure. Estimates are also produced for the maximum frequency of oscillations of the diodes which suggest that oscillators may operate with speeds comparable to III–V diodes.
Keywords
Silicon , Germanium , Electronic device , quantum effects , tunnelling
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2137922
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