Title of article
Structural and electrical properties of MOCVD-cobalt silicide on p-Si0.83Ge0.17/Si(001)
Author/Authors
Shin، نويسنده , , D.O. and Ahn، نويسنده , , Y.S. and Ban، نويسنده , , S.H. Tony Lee، نويسنده , , N.-E. and Ahn، نويسنده , , B.T. and Kim، نويسنده , , S.H. and Shim، نويسنده , , K.-H. and Kang، نويسنده , , J.-Y.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
279
To page
283
Abstract
Structural, chemical and electrical properties of cobalt silicide/p-Si0.83Ge0.17/Si(001) were investigated by various analytical methods. Analyses of the as-deposited cobalt silicide layers on p-Si0.83Ge0.17/n-Si(001) at the growth temperature Ts=650 °C by metal organic chemical vapor deposition (MOCVD) using cyclopentadienyl dicarbonyl cobalt (Co(η5-C5H5)(CO)2), revealed epitaxial CoSi2 phases, as well as C-containing high resistive phases. Rapid thermal annealing at elevated temperature of 800 °C increased the fraction of epitaxial CoSi2 phase by the reaction of the remaining SiGe layers with Co supplied from the top surface layer, resulting in the reduction in the sheet resistance from ≅230 (as-deposited) to ≅30 Ω/□.
Keywords
MOCVD , SiGe alloy , silicide , Cobalt disilicide
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2137975
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