Title of article
Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates
Author/Authors
Di Gaspare، نويسنده , , L and Scappucci، نويسنده , , G and Palange، نويسنده , , E and Alfaramawi، نويسنده , , K and Evangelisti، نويسنده , , F and Barucca، نويسنده , , G and Majni، نويسنده , , G، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
4
From page
346
To page
349
Abstract
The growth of high-mobility modulation-doped Si/SiGe heterostructures on silicon-on-insulator (SOI) substrates is demonstrated. The structural and electrical properties of the samples are comparable with those of similar samples grown on standard Si substrates. Electron mobilities as high as 2800 cm2 V−1 s−1 at room temperature and 8.2×104 cm2 V−1 s−1 at 4 K are obtained.
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2137989
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