Title of article
Defect specific topography of GaAs wafers by microwave-detected photo induced current transient spectroscopy
Author/Authors
Gründig-Wendrock، نويسنده , , B. and Jurisch، نويسنده , , M. and Niklas، نويسنده , , J.R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
371
To page
375
Abstract
Non-destructive and spatially resolved (35 μm) characterisation methods for high resistivity GaAs and epitaxial substrates are presented. Microwave detected photo induced current transient spectroscopy (PICTS) is a further development of the already existing method Microwave detected photoconductivity (MDP). Using various GaAs samples of different preparations, the possibilities of these new tools are demonstrated along with the first results for technologically relevant extrinsic and intrinsic defects.
Keywords
SI-GaAs , Picts , Microwave absorption , photoconductivity , Contactless , SI-Gallium Arsenide
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2138198
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