Radiation-induced defects in vitreous chalcogenide semiconductors studied by positron annihilation method

The defect formation process in vitreous chalcogenide semiconductors (VChS) of the ternary As–Ge–S system, induced by 60Co γ-irradiation with 2.82 MGy absorbed dose, is studied using positron annihilation lifetime method. The measured results are explained in terms of a modified model of coordination topological defects (CTD) with associated open volume microvoids, described by radiation-structural transformations at the level of both short-, and medium-range ordering.