• Title of article

    Theoretical study of the AlxGa1−xN alloys

  • Author/Authors

    de Paiva، نويسنده , , R and Alves، نويسنده , , J.L.A and Nogueira، نويسنده , , R.A and de Oliveira، نويسنده , , C and Alves، نويسنده , , H.W.L and Scolfaro، نويسنده , , L.M.R. and Leite، نويسنده , , J.R، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2002
  • Pages
    4
  • From page
    2
  • To page
    5
  • Abstract
    In this work we use a first-principles method based on the density functional theory, the full-potential linear augmented plane-wave method (FPLAPW), in order to calculate the electronic structures of the AlxGa1−xN alloys in the cubic modification. We adopt a model which allows the simulation of the composition x=0.0, 0.25, 0.50, 0.75 and 1.0. We obtain the equilibrium lattice parameters, the bulk moduli, the formation energies, the miscibility curves and the effective masses of the conduction and valence bands in the [100], [111] and [110] directions. The results can be used in the parameterization of theories based on effective hamiltonians. To our knowledge, this is the first time such a systematic ab initio study of effective masses of these semiconductor alloys is accomplished.
  • Keywords
    Alloys , Effective masses , GaN , ALN , AlGaN
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    2002
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2138356