Synthesis and characterization of GaN using gas–solid reactions

Gallium nitride powders were synthesized in a new vertical reactor to maximize contact between gas and solid phases. In the experiments, GaN powders were obtained by two different routes: (1) gas–solid reaction from Ga2O3/NH3 system; (2) gas–solid reaction from Ga2O3/3C/NH3 reaction system. The last system presents a new route to GaN from gas–solid reaction. The powders produced were collected and characterized using X-ray diffraction (XRD). Transmission electron microscopy (TEM) was used to characterize GaN produced from Ga2O3/NH3 system. XRD taken from the powders have shown different results. For the powder produced from Ga2O3/NH3 system, XRD pattern shows presence of GaN and unreacted Ga2O3. On the other hand, powder produced from Ga2O3/3C/NH3 system, XRD pattern shows presence of primarily GaN phase. Results show high conversion to GaN, when the solid phase reactant had been a Ga2O3 and carbon source mixtures.