• Title of article

    Structure of silicon processed by severe plastic deformation

  • Author/Authors

    Islamgaliev، نويسنده , , R.K. and Kuzel، نويسنده , , R and Mikov، نويسنده , , S.N and Igo، نويسنده , , A.V and Burianek، نويسنده , , J and Chmelik، نويسنده , , F and Valiev، نويسنده , , R.Z، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    6
  • From page
    205
  • To page
    210
  • Abstract
    The structural features of nanocrystalline (NC) Si processed by severe plastic deformation are considered. The results of studies by various techniques (transmission electron microscopy, X-ray diffraction, Raman scattering and photoluminescence) are presented. The investigations show that the structure of NC materials is characterized by both a small grain size and a specific defect structure of grain boundaries associated with a high level of elastic strains and significant microdistortions of the crystal lattice. The Raman spectrum reveals a peak shift of 2.5 cm−1 to lower frequencies, a peak broadening up to 14.2 cm−1, an asymmetry of the peaks and an additional peak at frequencies from 480 to 500 cm−1. A visible photoluminescence with a peak maximum at a wavelength of about 650 nm is observed.
  • Keywords
    Nanocrystalline silicon , Severe plastic deformation
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: A
  • Serial Year
    1999
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: A
  • Record number

    2138679