Title of article
Study of Ru etching using O2/Cl2 helicon plasmas
Author/Authors
Kim، نويسنده , , Hyoun Woo and Han، نويسنده , , Jae-Hyun and Ju، نويسنده , , Byong-Sun and Kang، نويسنده , , Chang-Jin and Moon، نويسنده , , Joo-Tae and Tokumoto، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
249
To page
253
Abstract
We have investigated the characteristics of ruthenium (Ru) etching using O2/Cl2 helicon plasmas, resulting in the high Ru etch profile (>85°) and the optimal etch rate (>500 Å min−1). We revealed that the chamber pressure greatly affects the Ru etch rate and Ru to mask etch selectivity. The dependence of Re etch rate on pressure was scrutinized for both patterned and non-patterned wafers.
Keywords
Ru , Helicon , Etching , Pressure
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2138783
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