Title of article
Photo-enhanced chemical wet etching of GaN
Author/Authors
Ko، نويسنده , , C.H. and Su، نويسنده , , Y.K. and Chang، نويسنده , , S.J. and Lan، نويسنده , , W.H. and Webb، نويسنده , , Jim and Tu، نويسنده , , M.C. and Cherng، نويسنده , , Y.T.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
43
To page
47
Abstract
In this paper, we report a photo-enhanced chemical etch rate study on two GaN samples of differing structural and electrical quality as a function of the KOH or H3PO4 etch solution molarity. The etch rate of KOH was observed to be higher than that of H3PO4. This was found to be result from the effects of surface band bending, and surface pinning on the chemical etching and photo-assisted etching of the layers. It was also found that the optimal etch rate occurred at different values of molarity for the two samples and that very different morphologies were observed after etching.
Keywords
GaN , PEC , SEM
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2138839
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