An advantage of MOS structures with ultra thin oxide during irradiation

An advantage of MOS structures with ultra thin oxide (<10–20 nm) during irradiation is investigated by thermally stimulated current (TSC) characteristics. It is shown that these MOS structures are radiation harder compared with the radiation hardness of MOS structures with thicker oxide, irradiated in the same conditions. Our results also demonstrate that during irradiation of ion implanted MOS structures, the concentration of all kinds of defects generated by implanted ions increases. The kinds of radiation-induced interface traps and their concentration depend strongly on the disposition of the maximum of the previously implanted ions with respect to the Si–SiO2 interface.