Infrared studies of oxygen-related defect formation in neutron-irradiated Cz-silicon after annealing at T=450–650 °C under hydrostatic pressure

The infrared absorption technique was used for the studies of oxygen aggregates and related defects in 5 MeV neutron-irradiated Czochralski-grown silicon after heat treatment (HT) at 450 and 650 °C under hydrostatic pressures (HP) of 1 and 1.1 GPa, respectively. The results obtained showed that the formation processes of classical thermal double donors (TDDs) are reduced in neutron-irradiated Si subjected to HP–HT treatment. This result can be explained in terms of higher formation rates of V–O defects, the so-called A-centres. The enhanced oxygen precipitation and shallow thermal donor formation are observed after HP–HT treatment at T=650 °C.