Effect of rapid thermal annealing on beryllium implanted p-type GaN

We report the results of rapid thermal annealing (RTA) effect on beryllium implanted in situ activated p-type GaN samples and investigate the ramping and isothermal annealing effect of RTA process for these samples. It is found that the optimum RTA condition is at the temperature of 1100 °C for 15 s. Furthermore, with equal total isothermal time of 60 s, we compared the multiple step annealing (MSA) at 1100 °C for four periods with single step annealing (SSA) for one period at the same annealing temperature of 1100 °C, and observed that the ramping effect with MSA could repair Be-related complex defect, and one time, long period isothermal annealing effect with SSA seems to induce much more defect. It seems that the multiple step annealing is more effective and induce less defect than single step annealing for Be-implanted in situ activated p-type GaN samples.