Title of article
Si overgrowth on Y2O3 (1 1 0)/Si (0 0 1) by molecular beam epitaxy
Author/Authors
Mavrou، نويسنده , , G. and Vellianitis، نويسنده , , G. and Apostolopoulos، نويسنده , , G. and Argyropoulos، نويسنده , , K. and Dimoulas، نويسنده , , A. and Scholz، نويسنده , , R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
3
From page
39
To page
41
Abstract
The overgrowth of silicon on Y2O3 (1 1 0)/Si (0 0 1) structures by means of molecular beam epitaxy is investigated. It is shown that Si overlayers grow epitaxially in the (1 1 0) orientation, following the orientation of Y2O3. Layers with 10 nm thickness exhibit Volmer–Weber growth with large 3-dimensional (3D) islands and structural defects. When the thickness is increased, the films become continuous but show increased surface roughness.
Keywords
High-k , Molecular Beam Epitaxy , metal oxides , Silicon on insulator
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2004
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2141313
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