Title of article
ZT thin films produced by metal organic-chemical vapour deposition to be used as high-k dielectrics
Author/Authors
Padeletti، نويسنده , , G and Cusmà، نويسنده , , A and Viticoli، نويسنده , , M and Ingo، نويسنده , , G.M and Mezzi، نويسنده , , A and Watts، نويسنده , , B، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
9
From page
104
To page
112
Abstract
In this work the synthesis and characterisation of ZrxTi1−xO2 (ZT) grown via a non conventional MOCVD apparatus on both silicon and platinum coated substrates are described. The samples have been chemically, morphologically and structurally characterised by AFM, XRD, SEM + FEG and XPS. Also high and low frequencies electrical characterisation has been performed to evaluate a possible application of such materials as high-k dielectrics.
Keywords
Zirconium titanate , Thin films , MO-CVD , High-k
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2004
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2141376
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