Title of article
Growth of gallium oxide thin films on silicon by the metal organic chemical vapor deposition method
Author/Authors
Kim، نويسنده , , Hyoun Woo and Kim، نويسنده , , Nam Ho، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
4
From page
34
To page
37
Abstract
We have deposited gallium oxide (Ga2O3) films on Si(1 0 0) substrates by metal organic chemical vapor deposition (MOCVD), by a reaction of a trimethylgallium (TMGa) and oxygen (O2) mixture. The effect of temperature on growth and structure of films has been investigated at temperatures of 500–600 °C. We revealed that the films were amorphous with very small crystallites. The films were smooth but the surface roughness increased with increasing the growth temperature.
Keywords
Temperature , Thin film , MOCVD , Ga2O3
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2004
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2141525
Link To Document