ESR detection of Ga self-interstitial defects in GaP nano-solids

The intrinsic point defects of GaP nano-solids have been investigated by means of electron spin resonance (ESR). An ESR spectrum attributed to the Ga self-interstitial in GaP nano-solids was observed with value g=2.0028 or 2.0030. The collapse of hyperfine splitting and narrowing of peak-to-peak linewidth (ΔHpp) of the ESR spectrum result from the possible rapid electron spin exchange effect. The concentration of dangling bonds for GaP nano-solids decreases when decreasing compaction pressure and with higher heat-treatment temperature. Both detection and control of the intrinsic point defects of nano-sized GaP materials are beneficial for further exploration of its fundamental properties and applications.