Defect structure in near–surface layer of CdHgTe crystals after low–energy Ar ion milling

In this paper, near-surface layer formed by ion beam milling of n-type CdHgTe crystals are studied using the Hall measurements. The results are interpreted taking into account that samples consist of both bulk and layer parts. A model of the creation and fast diffusion of defects explains significant change in the electrical properties of the layer. The study points out an easy control over the defect and dopant engineering in the near-surface layer of a sample.