A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations

Ion implantation and subsequent annealing are essential stages in todayʹs advanced CMOS processing. Although the dopant implanted profile can be accurately predicted by analytical fits calibrated with SIMS profiles, the damage has to be estimated with a binary collision approximation implant simulator. Some models have been proposed, like the “+n”, in an attempt to simplify the anneal simulation. We have used the atomistic kinetic Monte Carlo dados to elucidate which are the implant modeling features most relevant in the simulation of transient enhanced diffusion (TED). For the experimental conditions studied we find that the spatial correlation of the I, V Frenkel pairs is not critical in order to yield the correct I supersaturation, that can be simulated just taking into account the net I–V excess distribution. In contrast to, simulate impurity clustering/deactivation when there is an impurity concentration comparable to the net I–V excess, the full I and V profiles have to be used.