Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p–n junction diodes

This paper describes the impact of active area and shallow trench isolation (STI) width on the junction leakage current and doping concentration. A higher junction leakage current is found for a narrower active area and STI width. This is mainly due to a higher compressive stress. This compressive stress also affects the doping concentration near the junction. A higher compressive stress when reduce active area width causes a higher doping concentration while a higher compressive stress when reduce STI width results in a lower doping concentration.