Title of article
Effects of CuO on the grain size and electrical properties of SnO2-based varistors
Author/Authors
Wang، نويسنده , , Chunming and Wang، نويسنده , , Jinfeng and Chen، نويسنده , , Hong-Cun and Su، نويسنده , , Wen-Bin and Zang، نويسنده , , Guo-Zhong and Qi، نويسنده , , Peng and Zhao، نويسنده , , Ming-Lei، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
5
From page
54
To page
58
Abstract
The effects of CuO on the SnO2·Co2O3·Ta2O5 varistor system sintered at 1250 °C for 80 min were investigated. It was found that CuO significantly affects the grain size and electrical properties of the SnO2-based varistors. The grain size rises from 4.7 to 11.4 μm, the breakdown electrical field decreases from 485 to 265 V mm−1 and relative dielectric constant (at 1 kHz) increases from 970 to 2451 with an increase in CuO concentration from 0.00 to 1.00 mol%. The sample with 0.25 mol% CuO has the best nonlinear electrical property and the highest nonlinear coefficient (α = 15.7) among all samples. The reason why grain size increases with increasing CuO concentration is explained. Also, the interpretation of the increase in nonlinearity is given.
Keywords
Electrical properties , Tin oxide , varistors , CuO , dielectric properties , Defect barriers
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2005
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2142203
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