Title of article
Synthesis, characterization and decomposition studies of tris(N,N-dibenzyldithiocarbamato)indium(III): chemical spray deposition of polycrystalline CuInS2 on copper films
Author/Authors
Hehemann، نويسنده , , David G. and Lau، نويسنده , , J. Eva and Harris، نويسنده , , Jerry D. and Hoops، نويسنده , , Michael D. and Duffy، نويسنده , , Norman V. and Fanwick، نويسنده , , Philip E. and Khan، نويسنده , , Osman and Jin، نويسنده , , Michael H.-C. and Hepp، نويسنده , , Aloysius F.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
9
From page
381
To page
389
Abstract
Tris(bis(phenylmethyl)carbamodithioato-S,S′), commonly referred to as tris(N,N-dibenzyldithiocarbamato)indium(III), In(S2CNBz2)3, was synthesized and characterized by single crystal X-ray crystallography. The compound crystallizes in the triclinic space group P 1 ¯ with two molecules per unit cell. The material was further characterized using a novel analytical system employing the combined powers of thermogravimetric analysis, gas chromatography/mass spectrometry, and Fourier transform infrared (FT-IR) spectroscopy to investigate its potential use as a precursor for the chemical vapor deposition (CVD) of thin film materials for photovoltaic applications. Upon heating, the material thermally decomposes to release CS2 and benzyl moieties in to the gas phase, resulting in bulk In2S3. Preliminary spray CVD experiments indicate that In(S2CNBz2)3 decomposed on a Cu substrate reacts to produce stoichiometric CuInS2 films.
Keywords
Thin film , TGA , crystal structure , Spray CVD , solar cells , In2S3
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2005
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2142334
Link To Document