Title of article
Interface reactivity of Pr and SiO2 at 4H-SiC(0 0 0 1)
Author/Authors
Schmeiكer، نويسنده , , D. and Lupina، نويسنده , , G. and Muessig، نويسنده , , H.J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
4
From page
19
To page
22
Abstract
We use photoelectron spectroscopy to characterize the reactivity of Pr evaporated on SiO2 covered 4H-SiC substrates. We analyze the Si2p, C1s, and O1s core levels and find that Pr reacts at RT with the SiO2 layer to form Pr-silicate. In addition also Pr-silizide is formed as well as Pr-carbides. While the latter are formed as reaction intermediates after Pr evaporation, the Pr-silicate layer is formed upon annealing to 300 °C and is stable up to 800 °C.
Keywords
High-k dielectric layer , Photoelectron spectroscopy , 4h-SiC , Interface reactivity
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2005
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2142491
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