Title of article
Recent developments in the MOCVD and ALD of rare earth oxides and silicates
Author/Authors
Jones، نويسنده , , Anthony C. and Aspinall، نويسنده , , Helen C. and Chalker، نويسنده , , Paul R. and Potter، نويسنده , , Richard J. and Kukli، نويسنده , , Kaupo and Rahtu، نويسنده , , Antti and Ritala، نويسنده , , Mikko and Leskelن، نويسنده , , Markku، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
8
From page
97
To page
104
Abstract
Lanthanide, or rare-earth oxides are currently being investigated as alternatives to SiO2 as the dielectric insulating layer in sub-0.1 μm CMOS technology. Metalorganic chemical vapour deposition (MOCVD) and atomic layer deposition (ALD) are promising techniques for the deposition of these high-κ dielectric oxides and in this paper some of our recent research into the MOCVD and ALD of PrOx, La2O3, Gd2O3, Nd2O3 and their related silicates are reviewed.
Keywords
Lanthanide oxides , Metalorganic chemical vapour deposition , atomic layer deposition
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2005
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2142536
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