Effect of annealing on CoSi2 thin films prepared by magnetron sputtering

Cobalt disilicide (CoSi2) thin films were prepared by radio frequency magnetron sputtering using CoSi2 alloy target which features lower stress and more simplicity. The structure and resistivity of thin films annealed at different temperatures for different time were researched by X-ray diffraction (XRD) and four-point probe, respectively. The best electrical resistivity (23 μΩ cm), which is similar to the value of the thin films prepared by a solid state reaction, was obtained when the thin films were annealed at 600 °C in air or argon ambient. The decrease of resistivity was attributed to the grain growth and defects decrease while the increase of resistivity was ascribed to the degradation of thin films. The thermal stability of thin films was improved by oxygen.