Preparation of type-II MoS2 film by chemical bath deposition onto Si coated with electrolessly Ni

MoS2 films were prepared by chemical bath deposition using Ni interlayer, which was deposited electrolessly on Si substrates. The combined techniques of X-ray diffraction, field emission scanning electron microscope (FESEM), Raman spectroscopy and optical reflective spectra were used for characterization of MoS2 films at different conditions. Results indicated that the type-II MoS2 films oriented with their c axis perpendicular to the plane of Si substrates were obtained at annealing temperature greater than 800 °C. The effect of nickel on the orientation of 2H–MoS2 crystallites can be explained on the basis of binary Ni–S phase diagram. The thin films have a direct optical bandgap of 1.87 eV as a result of optical reflective spectra. This article offers an easy way to prepare type-II MoS2 film of better crystallite.