The potential red emitting Gd2−yEuy (WO4)3−x(MoO4)x phosphors for UV InGaN-based light-emitting diode

A series of Eu3+-doped solid solution of tungstate and molybdate were prepared by solid-state reaction technique and their photoluminescence property were investigated for searching a new red phosphor for UV InGaN-based light-emitting diode (LED). The phosphors show intensely red emission with good color purity. Among these phosphors, GdEu(MoO4)0.5(WO4)2.5 exhibits the strongest red emission under 395 nm light excitation and appropriate CIE chromaticity coordinates (x = 0.67, y = 0.33) same with the NTSC standard values, and with which a red UV InGaN-based LED was fabricated based on the standard LED technology at IF = 20 mA. The emission spectrum of the red LED indicates that this red phosphor is a potential candidate for the near UV InGaN based LEDs.