Title of article
Fluorescence dynamics and energy migration in Er3+-doped SRSO structure
Author/Authors
Al Choueiry، نويسنده , , Antoine and Jurdyc، نويسنده , , Anne-Marie and Jacquier، نويسنده , , Bernard and Gourbilleau، نويسنده , , Fabrice and Rizk، نويسنده , , Richard، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
3
From page
157
To page
159
Abstract
Decay time properties of erbium ions in silicon rich silicon oxide multilayers are reported. A non-exponential time behaviour for the 4I13/2 decay profile is observed and is interpreted in a diffusion-limited model. Furthermore, an appreciable increase of the lifetime of the 4I13/2 is observed when the sample temperature is lower than 50 K. The lifetime dependence of the 4I13/2 as a function of temperature was successfully fitted with a model taking into account the temperature dependence of the energy migration between Er3+ ions in the presence of quenching impurities.
Keywords
Energy migration , Erbium decay time , Silicon rich silicon oxide multilayers , Diffusion-limited model
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2008
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2145572
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