A visible transparent electroluminescent europium doped gallium oxide device

Beta phase gallium oxide thin films deposited by pulsed laser deposition are efficient hosts for rare earth metals such as europium. In this study europium doped gallium oxide deposited on glass substrates is used to make red (611 nm) electroluminescent devices that are transparent to the visible spectrum. The conducting electrodes used are indium tin oxide (ITO), and a novel indium gallium zinc oxide (IGZO) layer also deposited by pulsed laser deposition. The origin of the red emission is the 5D0 to 7F2 transition and is consistent with photoluminescence and cathodoluminescence results. The turn on voltage of the device is about 45 V ac, and the device appears to be robust, operating at elevated voltages without degradation.