Title of article
Investigations of porous InP properties by XRD, IR, USXES, XANES and PL techniques
Author/Authors
Domashevskaya، نويسنده , , E.P. and Kashkarov، نويسنده , , V.M. and Seredin، نويسنده , , P.V. and Terekhov، نويسنده , , V.A. and Turishchev، نويسنده , , S.Yu. and Arsentyev، نويسنده , , I.N. and Ulin، نويسنده , , V.P.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
4
From page
144
To page
147
Abstract
The work is concerned with complex investigations of the layers of porous indium phosphide (por-InP) using X-ray diffraction and IR-spectroscopy, ultrasoft X-ray emission spectroscopy (USXES), spectroscopy of X-ray near-edge absorption fine structure XANES (X-ray absorption near-edge structure) and photoluminescence, obtained by anodic pulse electrochemical etching of single-crystalline plates of InP(1 0 0) of n-type conductivity (n ∼ 1018). The data obtained as a result of this work demonstrated that the surface layers of por-InP have cluster structure with the formation of InP quasi-molecules.
Keywords
surface structure , infrared spectroscopy , Indium phosphide , X-ray spectroscopy
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2008
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2145628
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