Hydrogenation of platinum introduced in silicon by radiation enhanced diffusion

Hydrogenation of deep-lying platinum layers in silicon is reported. Two methods of hydrogenation were compared – rf hydrogen plasma exposure at 250 °C and proton implantation – both followed by annealing up to 400 °C. Several platinum–hydrogen complexes were identified by deep-level transient spectroscopy and their annealing characteristics were established. Result show that proton implantation allows local hydrogenation of platinum atoms at the range of implanted protons. On the other hand, platinum atoms substantially accelerate annealing of radiation defects introduced by implanted protons.