Characterisation of nanocavities in He+-implanted silicon by transmission electron microscopy and small-angle X-ray scattering

Nanocavities created in silicon using high energy He+ implantation are studied using the combination of transmission electron microscopy experiments and small-angle X-ray scattering measurements. The complementarity of the two techniques is presented and using the results from both techniques, a complete characterisation of nanocavities can be drawn in terms of location of the implanted region, morphology, mean size and volume fraction as well as the cavity size distribution.