Title of article
Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers
Author/Authors
Shu، نويسنده , , G.W and Wang، نويسنده , , J.S. and Shen، نويسنده , , J.L. and Hsiao، نويسنده , , Alan R.S and Chen، نويسنده , , J.F. and Lin، نويسنده , , T.Y. and Wu، نويسنده , , C.H and Huang، نويسنده , , Anthony Y.H. and Yang، نويسنده , , T.N.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
4
From page
46
To page
49
Abstract
Photoluminescence (PL), PL excitation (PLE), and time-resolved PL were used to study effects of InGaAs layers on the optical properties of InAs/GaAs quantum dots (QDs). A rich fine structure in the excited states of confined excitons (up to n = 4 quantum states) was observed, providing useful information to study the quantum states in the InAs/GaAs QDs. A significant redshift of the PL peak energy for the QDs covered by InGaAs layers was observed, attributing to the decrease of the QD strain and the lowing of the quantum confinement.
Keywords
InAs , Quantum dots , Photoluminescence
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2010
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2147229
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