Ion implanted crystalline silicon solar cells with blanket and selective emitter

We present an alternative method to form a blanket and selective emitter using a method that implants ion. This avoids several problems such as losing area by laser isolation and wet process for removing phosphosilicate glass formed on silicon substrate during the conventional thermal POCl3 diffusion process. It was demonstrated that laser isolation is not necessary after the ion implanted solar cells were fabricated. Furthermore, we also fabricated selective emitter solar cells. After studying their characteristics, it was clear that the solar cells with ion implanted selective emitter improved cell efficiency. This is because their blue response increased and their reverse saturation current density decreased. Using an industrially feasible process, solar cell efficiencies of >18.5% on 156 mm × 156 mm using a shallow 100 Ω/sq. emitter and an ion implanted 65 Ω/sq. selective emitter were achieved.