Title of article
Influence of stain etching on low minority carrier lifetime areas of multicrystalline silicon for solar cells
Author/Authors
Montesdeoca-Santana، نويسنده , , A. and Gonzلlez-Dيaz، نويسنده , , B. and Jiménez-Rodrيguez، نويسنده , , Joel E. and Ziegler، نويسنده , , J. and Velلzquez-Martي، نويسنده , , J.J. and Hohage، نويسنده , , S. and Borchert، نويسنده , , D. and Guerrero-Lemus، نويسنده , , R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
5
From page
1541
To page
1545
Abstract
In this work the use of HF/HNO3 solutions for texturing silicon-based solar cell substrates by stain etching and the influence of texturing on minority carrier lifetimes are studied. Stain etching is currently used to decrease the reflectance and, subsequently improve the photogenerated current of the cells, but also produces nanostructures on the silicon surface. In the textured samples it has been observed that an improvement on the minority carrier lifetime with respect to the samples treated with a conventional saw damage etching process is produced on grain boundaries and defects, and the origin of this effect has been discussed.
Keywords
Texturization , solar cells , mc-Silicon
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2011
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2148810
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