Title of article
Properties of pulse plated ZnSe films
Author/Authors
Murali، نويسنده , , K.R. and Balasubramanian، نويسنده , , M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
5
From page
118
To page
122
Abstract
ZnSe thin films were pulse plated on titanium and tin oxide substrates maintained at room temperature from the precursors. The films exhibited cubic structure. Optical band gap of 2.70 eV was obtained. XPS measurements indicated the formation of ZnSe. AFM studies indicated that the grain size decreased as the duty cycle decreased. Hot probe measurements indicated films to be n-type. Luminescence emission was observed at 675 nm for an excitation of 450 nm.
Keywords
ZnSe , Thin film , Semiconductor , Electrodeposition , Pulse plating
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Serial Year
2006
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Record number
2150096
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