Dislocation-induced IR absorption and photoluminescence emission in Cd0.96Zn0.04Te

Dislocations were introduced into CdZnTe wafers by the means of bending deformation at an elevated temperature. The average IR transmittance of CdZnTe wafers was found to be decreased to 44% after deformation from 64% before. The polarization absorption of dangling-bond electrons in dislocations should be responsible for the decrease of IR transmittance. In photoluminescence measurement, the shallow donor–acceptor pair transition peak at 1.557 eV and its first longitudinal optical phonon replica were detected in CdZnTe after deformation. In defect-related region, a new band Dcomplex located at 1.508 eV appeared, which should be attributed to defect levels introduced by dislocations.