Technology of ZnO nanofibers based devices

In the presented work, the possibility of fabrication of ZnO single- and multi-nanofiber structures using a standard microelectronic device technology were studied. An innovative fabrication step, namely, selective wet chemical nanofibers etching through a photoresist mask, was used to define the active area, along with mesa etch in the Si/SiO2 substrate. Test structures in the configuration of a resistor and Schottky diode with chemically active electrospun ZnO nanofibers were prepared. The Ti/Au ohmic and Pt Schottky contacts were fabricated using a lift-off photolithography process. Optical and scanning electron microscopy studies were done to characterize ZnO nanofibers and topography of contacts. The measurements made for electrical characterization showed linear I–V dependence and saturation of the current for single ZnO nanofiber structures.